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| BSO150N03 OptiMOSTM2 Power-Transistor Features * Fast switching MOSFET for SMPS * Optimized technology for notebook DC/DC converters * Qualified according to JEDEC for target applications * N-channel * Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * Avalanche rated * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type BSO150N03 Package PG-DSO-8 Marking 150N3 1) Product Summary V DS R DS(on),max ID PG-DSO-8 30 15 9.1 V m A Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current ID T A=25 C2) T A=70 C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 C2) 2.0 -55 ... 150 55/150/56 T A=25 C3) I D=9.1 A, R GS=25 I D=9.1 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C 9.1 7.3 36 82 6 20 1.4 mJ kV/s V W C Value steady state 7.6 6.1 A Unit Rev. 1.7 page 1 2010-05-11 BSO150N03 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p10 s minimal footprint, steady state 6 cm2 cooling area2), t p10 s 6 cm2 cooling area2), steady state Values typ. max. Unit - - 50 K/W R thJA - - 110 - - 150 - - 63 - - 90 Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=25 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=8.4 A V GS=10 V, I D=9.1 A Gate resistance Transconductance 1) 2) 30 1.2 - 1.6 0.1 2 1 V A - 10 10 15.2 12.5 1.5 26 100 100 19 15 S nA m RG g fs |V DS|>2|I D|R DS(on)max, I D=9.1 A 13 J-STD20 and JESD22 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 Rev. 1.7 page 2 2010-05-11 BSO150N03 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 C V GS=0 V, I F=2 A, T j=25 C V R=12 V, I F=I S, di F/dt =400 A/s 0.75 2 36 1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=4.5 A, V GS=0 to 5 V 3.9 2.3 2.6 4.3 11 2.8 9.6 12 5.2 3.0 4.0 6.1 15 13 16 V nC nC C iss C oss C rss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=4.5 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 1420 510 67 5.3 4.0 21 3.0 1890 680 100 7.9 6.0 31 4.5 ns pF Values typ. max. Unit Reverse recovery charge Q rr - - 10 nC 4) See figure 16 for gate charge parameter definition Rev. 1.7 page 3 2010-05-11 BSO150N03 1 Power dissipation P tot=f(T A); t p10 s 2 Drain current I D=f(T A); V GS10 V; t p10 s 2.5 10 2 8 1.5 6 P tot [W] 1 I D [A] 4 0.5 2 0 0 40 80 120 160 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C1); D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 102 10 s 100 s 0.5 100 101 10 1 ms 101 10 ms 0.2 10 100 1 limited by on-state resistance Z thJS [K/W] 0.1 I D [A] 0.05 10 s 100 1 0.02 10-1 0.1 DC 0.01 single pulse 10-2 0.01 0.1 1 10 100 10-1 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 10-1 100 V DS [V] 101 102 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 1.7 page 4 2010-05-11 BSO150N03 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 20 10 V 4.5 V 3.3 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 3.4 V 3.6 V 16 3.2 V 3.8 V 20 R DS(on) [m] 12 4V 4.2 V 4.5 V 5V 10 V I D [A] 3.1 V 8 3V 10 4 2.8 V 2.6 V 0 0 1 2 3 0 0 10 20 30 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 35 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 30 40 25 30 20 15 g fs [S] 20 10 125 C 25 C I D [A] 10 5 0 0 1 2 3 4 0 0 10 20 30 V GS [V] I D [A] Rev. 1.7 page 5 2010-05-11 BSO150N03 9 Drain-source on-state resistance R DS(on)=f(T j); I D=9.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 25 2.5 20 2 250 A 98 % R DS(on) [m] 15 V GS(th) [V] 1.5 25 A typ 10 1 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 150 C Ciss 25 C 103 1000 10 Coss 150 C, 98 % C [pF] 102 I F [A] 100 Crss 1 25 C, 98% 10 0.1 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 V DS [V] V SD [V] Rev. 1.7 page 6 2010-05-11 BSO150N03 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 10 125 C 100 C 25 C 15 V 14 Typ. gate charge V GS=f(Q gate); I D=4.5 A pulsed parameter: V DD 12 10 6V 24 V 8 1 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 0.1 0 0 4 8 12 16 20 24 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 1.7 page 7 2010-05-11 BSO150N03 Package Outline PG-DSO-8 Rev. 1.7 page 8 2010-05-11 BSO150N03 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user Rev. 1.7 page 9 2010-05-11 |
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